Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,363
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STMicroelectronics MOSFET PCH 30V 9A POWERFLAT STripFET™ H6 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 3W (Ta) P-Channel - 30V 9A (Tc) 15 mOhm @ 4.5A, 10V 1V @ 250µA 24nC @ 4.5V 2615pF @ 25V 4.5V, 10V ±20V
FDT439N
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3,905
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ON Semiconductor MOSFET N-CH 30V 6.3A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) N-Channel - 30V 6.3A (Ta) 45 mOhm @ 6.3A, 4.5V 1V @ 250µA 15nC @ 4.5V 500pF @ 15V 2.5V, 4.5V ±8V
TSM9409CS RLG
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3,405
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 3.5A 8SOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 3W (Ta) P-Channel - 60V 3.5A (Ta) 155 mOhm @ 3.5A, 10V 1V @ 250µA 6nC @ 10V 540pF @ 30V 4.5V, 10V ±20V
FDT434P
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2,089
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ON Semiconductor MOSFET P-CH 20V 6A SOT-223 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 20V 6A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 19nC @ 4.5V 1187pF @ 10V 2.5V, 4.5V ±8V