- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,251
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,267
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 2A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 310mW (Ta), 2.17W (Tc) | N-Channel | 20V | 2.2A (Ta) | 76 mOhm @ 2A, 4.5V | 1V @ 250µA | 3.9nC @ 4.5V | 183pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,539
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 1A TO-236AB | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 325mW (Ta), 1.14W (Tc) | N-Channel | 20V | 1A (Ta) | 165 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.65nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V |