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- Packaging :
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- FET Feature :
- Rds On (Max) @ Id, Vgs :
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16 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,120
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,251
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,239
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,489
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,351
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,988
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,699
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,323
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,212
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,567
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,208
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,933
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,111
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,252
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
812
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,336
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V |