- Series :
- Part Status :
- Power Dissipation (Max) :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,136
In-stock
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Infineon Technologies | MOSFET P-CH 30V 8A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 8A (Tc) | 20 mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,662
In-stock
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Infineon Technologies | MOSFET P-CH 30V 4.7A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,376
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,971
In-stock
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Infineon Technologies | MOSFET P-CH 30V 8A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 8A (Tc) | 20 mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
949
In-stock
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Infineon Technologies | MOSFET P-CH 30V 10A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 10A (Ta) | 20 mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | 1700pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
874
In-stock
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Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,174
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,513
In-stock
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Infineon Technologies | MOSFET P-CH 30V 4.7A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,111
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V |