- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,157
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 40V 39A 8HSMT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 20W (Tc) | N-Channel | - | 40V | 39A (Tc) | 7.2 mOhm @ 15A, 10V | 2.5V @ 1mA | 11.6nC @ 4.5V | 1450pF @ 20V | 10V | ±20V | |||
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VIEW |
1,346
In-stock
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Infineon Technologies | MOSFET P-CH 30V 15A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 15A (Ta) | 7.2 mOhm @ 15A, 10V | 2.4V @ 50µA | 98nC @ 10V | 2590pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,479
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 35A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | P-Channel | - | 30V | 35A (Tc) | 7.2 mOhm @ 15A, 10V | 2.5V @ 250µA | 102nC @ 10V | 3595pF @ 15V | 4.5V, 10V | ±25V |