- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,290
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 270MA TO92-18RM | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-18RM | 800mW (Ta) | P-Channel | 60V | 270mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 3nC @ 15V | - | 4.5V, 10V | ±20V | |||
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VIEW |
1,330
In-stock
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Infineon Technologies | MOSFET N-CH 650V 0.8A TO-252 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 11W (Tc) | N-Channel | 650V | 800mA (Tc) | 6 Ohm @ 500mA, 10V | 3.9V @ 250µA | 5nC @ 10V | 100pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,744
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 270MA TO92-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-226AA | 800mW (Ta) | P-Channel | 60V | 270mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 3nC @ 15V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
820
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 185MA TO-236 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | P-Channel | 60V | 185mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,371
In-stock
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Microchip Technology | MOSFET P-CH 40V 0.16A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 360mW (Ta) | P-Channel | 40V | 160mA (Tj) | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,199
In-stock
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Microchip Technology | MOSFET N-CH 200V 0.25A TO92-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 200V | 250mA (Tj) | 6 Ohm @ 500mA, 10V | 1.6V @ 1mA | - | 150pF @ 25V | 5V, 10V | ±20V | |||
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|
VIEW |
1,222
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 185MA SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | P-Channel | 60V | 185mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,642
In-stock
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Microchip Technology | MOSFET N-CH 240V 360MA SOT89-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | TO-243AA (SOT-89) | 1.6W (Tc) | N-Channel | 240V | 360mA (Tj) | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | 125pF @ 25V | 4.5V, 10V | ±20V | |||
