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- FET Feature :
- Vgs(th) (Max) @ Id :
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19 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,487
In-stock
|
ON Semiconductor | MOSFET N-CH 25V 9.7A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 1.25W (Ta), 74.4W (Tc) | N-Channel | - | 25V | 9.7A (Ta) | 8 mOhm @ 20A, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | 4.5V, 10V | ±20V | ||||
VIEW |
2,359
In-stock
|
ON Semiconductor | MOSFET N-CH 25V 9.7A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 1.25W (Ta), 74.4W (Tc) | N-Channel | - | 25V | 9.7A (Ta) | 8 mOhm @ 20A, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | 4.5V, 10V | ±20V | ||||
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | ||||
VIEW |
2,144
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,810
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,805
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
950
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,753
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,867
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 9.7A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.68W (Ta) | N-Channel | - | 30V | 9.7A (Ta) | 16 mOhm @ 11.6A, 10V | 1.95V @ 250µA | 18.85nC @ 10V | 867pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,962
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 9.7A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.68W (Ta) | N-Channel | - | 30V | 9.7A (Ta) | 16 mOhm @ 11.6A, 10V | 1.95V @ 250µA | 18.85nC @ 10V | 867pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,248
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 9.7A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.68W (Ta) | N-Channel | - | 30V | 9.7A (Ta) | 16 mOhm @ 11.6A, 10V | 1.95V @ 250µA | 18.85nC @ 10V | 867pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,685
In-stock
|
Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | Automotive, AEC-Q101 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 80V | 9.7A (Ta) | 16.5 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | ||||
VIEW |
2,940
In-stock
|
Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 80V | 9.7A (Ta) | 16.5 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | ||||
VIEW |
2,079
In-stock
|
Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 80V | 9.7A (Ta) | 16.5 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | ||||
VIEW |
1,458
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
1,485
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
1,995
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,760
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 100W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
2,192
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V |