- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
852
In-stock
|
Renesas Electronics America | MOSFET N-CH 60V 80A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | - | 57nC @ 10V | 4150pF @ 10V | 10V | ±20V | |||
|
VIEW |
950
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 80A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 100V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | - | 147nC @ 10V | 10000pF @ 10V | 10V | ±20V | |||
|
VIEW |
3,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 75V 80A TO220SIS | U-MOSVIII-H | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 75V | 80A (Ta) | 4.5 mOhm @ 40A, 10V | 4V @ 1mA | 175nC @ 10V | 8200pF @ 10V | 10V | ±20V | |||
