- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,202
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,106
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 1.2A SSOT3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | - | 20V | 1.2A (Ta) | 200 mOhm @ 1.3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 360pF @ 10V | 2.7V, 4.5V | ±8V | |||
|
VIEW |
1,193
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 30V | 1.2A (Ta) | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,433
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,047
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
1,033
In-stock
|
Panasonic Electronic Components | MOSFET P-CH 12V 1.2A MINI-5P | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | Mini5-G1 | 600mW (Ta) | P-Channel | Schottky Diode (Isolated) | 12V | 1.2A (Ta) | 450 mOhm @ 800mA, 4V | 1.3V @ 1mA | - | - | 4V | ±15V | |||
