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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRLML2803TR	RFQ VIEW	PDF RFQ	1,193 In-stock	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT-23		HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Micro3™/SOT-23	540mW (Ta)	N-Channel	-	30V	1.2A (Ta)	250 mOhm @ 910mA, 10V	1V @ 250µA	5nC @ 10V	85pF @ 25V	4.5V, 10V	±20V
	IRLML2803TRPBF	RFQ VIEW	PDF RFQ	2,236 In-stock	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT-23		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Micro3™/SOT-23	540mW (Ta)	N-Channel	-	30V	1.2A (Ta)	250 mOhm @ 910mA, 10V	1V @ 250µA	5nC @ 10V	85pF @ 25V	4.5V, 10V	±20V
	IRLML2803TRPBF	RFQ VIEW	PDF RFQ	2,926 In-stock	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT-23		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Micro3™/SOT-23	540mW (Ta)	N-Channel	-	30V	1.2A (Ta)	250 mOhm @ 910mA, 10V	1V @ 250µA	5nC @ 10V	85pF @ 25V	4.5V, 10V	±20V
	IRLML2803TRPBF	RFQ VIEW	PDF RFQ	601 In-stock	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT-23		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Micro3™/SOT-23	540mW (Ta)	N-Channel	-	30V	1.2A (Ta)	250 mOhm @ 910mA, 10V	1V @ 250µA	5nC @ 10V	85pF @ 25V	4.5V, 10V	±20V

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