Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3K106TU(TE85L)
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1,731
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.2A UFM π-MOSVI Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) N-Channel 20V 1.2A (Ta) 310 mOhm @ 600mA, 10V 2.3V @ 100µA - 36pF @ 10V 4V, 10V ±20V
SSM3K106TU(TE85L)
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3,433
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.2A UFM π-MOSVI Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) N-Channel 20V 1.2A (Ta) 310 mOhm @ 600mA, 10V 2.3V @ 100µA - 36pF @ 10V 4V, 10V ±20V
SSM3K106TU(TE85L)
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RFQ
3,291
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.2A UFM π-MOSVI Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) N-Channel 20V 1.2A (Ta) 310 mOhm @ 600mA, 10V 2.3V @ 100µA - 36pF @ 10V 4V, 10V ±20V