Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SSM3K01T(TE85L,F)
RFQ
VIEW
RFQ
2,359
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 3.2A TSM π-MOSVI Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 1.25W (Ta) N-Channel 30V 3.2A (Ta) 120 mOhm @ 1.6A, 4V - - 152pF @ 10V 2.5V, 4V ±10V
TSM2305CX RFG
RFQ
VIEW
RFQ
3,962
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 3.2A SOT23 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.25W (Ta) P-Channel 20V 3.2A (Ta) 55 mOhm @ 3.2A, 4.5V 1V @ 250µA 10nC @ 10V 990pF @ 10V 1.8V, 4.5V ±8V