Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Nexperia USA Inc. MOSFET N-CH 30V 3.2A 3DFN - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XDFN Exposed Pad DFN1010D-3 400mW (Ta), 8.33W (Tc) N-Channel 30V 3.2A (Ta) 55 mOhm @ 3.2A, 10V 2V @ 250µA 6.3nC @ 10V 209pF @ 15V 4.5V, 10V ±20V
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Nexperia USA Inc. MOSFET N-CH 30V 3.2A DFN1010D-3G - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XDFN Exposed Pad DFN1010D-3 400mW (Ta), 8.33W (Tc) N-Channel 30V 3.2A (Ta) 55 mOhm @ 3.2A, 10V 2V @ 250µA 6.3nC @ 10V 209pF @ 15V 4.5V, 10V ±20V
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Nexperia USA Inc. MOSFET N-CH 30V 3.2A DFN1010D-3G - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XDFN Exposed Pad DFN1010D-3 400mW (Ta), 8.33W (Tc) N-Channel 30V 3.2A (Ta) 55 mOhm @ 3.2A, 10V 2V @ 250µA 6.3nC @ 10V 209pF @ 15V 4.5V, 10V ±20V
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Nexperia USA Inc. MOSFET N-CH 30V 3.2A DFN1010D-3G - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XDFN Exposed Pad DFN1010D-3 400mW (Ta), 8.33W (Tc) N-Channel 30V 3.2A (Ta) 55 mOhm @ 3.2A, 10V 2V @ 250µA 6.3nC @ 10V 209pF @ 15V 4.5V, 10V ±20V