Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP100,135
RFQ
VIEW
RFQ
1,451
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 3.2A SOT223 TrenchMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Tc) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V 4.5V, 10V ±20V
BSP100,135
RFQ
VIEW
RFQ
2,450
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 3.2A SOT223 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Tc) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V 4.5V, 10V ±20V
BSP100,135
RFQ
VIEW
RFQ
3,102
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 3.2A SOT223 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Tc) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V 4.5V, 10V ±20V
IRLMS1503TR
RFQ
VIEW
RFQ
3,215
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
IRLMS1503TRPBF
RFQ
VIEW
RFQ
1,676
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
IRLMS1503TRPBF
RFQ
VIEW
RFQ
1,059
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
IRLMS1503TRPBF
RFQ
VIEW
RFQ
2,140
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V