- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,472
In-stock
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Diodes Incorporated | MOSFET N-CH 12V 3.2A DFN1010-3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 500mW (Ta) | N-Channel | - | 12V | 3.2A (Ta) | 45 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 375pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,644
In-stock
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Diodes Incorporated | MOSFET N-CH 12V 3.2A DFN1010-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 500mW (Ta) | N-Channel | - | 12V | 3.2A (Ta) | 45 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 375pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
1,418
In-stock
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Diodes Incorporated | MOSFET N-CH 12V 3.2A DFN1010-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 500mW (Ta) | N-Channel | - | 12V | 3.2A (Ta) | 45 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 375pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,552
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 3.2A TO-236AB | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 66 mOhm @ 3.2A, 4.5V | 900mV @ 250µA | 15.7nC @ 4.5V | 24pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
783
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 3.2A TO-236AB | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 66 mOhm @ 3.2A, 4.5V | 900mV @ 250µA | 15.7nC @ 4.5V | 24pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,654
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 3.2A TO-236AB | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 66 mOhm @ 3.2A, 4.5V | 900mV @ 250µA | 15.7nC @ 4.5V | 24pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,980
In-stock
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Texas Instruments | 20V P-CHANNEL FEMTOFET | FemtoFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 35 mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5nC @ 4.5V | 533pF @ 10V | 1.8V, 8V | -12V | |||
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|
VIEW |
3,359
In-stock
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Texas Instruments | 20V P-CHANNEL FEMTOFET | FemtoFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 35 mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5nC @ 4.5V | 533pF @ 10V | 1.8V, 8V | -12V | |||
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|
VIEW |
1,250
In-stock
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Texas Instruments | 20V P-CHANNEL FEMTOFET | FemtoFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 35 mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5nC @ 4.5V | 533pF @ 10V | 1.8V, 8V | -12V | |||
|
VIEW |
2,794
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
1,849
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
2,615
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
