- Manufacture :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,289
In-stock
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ON Semiconductor | MOSFET P-CH 200V 4.8A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 75W (Tc) | P-Channel | 200V | 4.8A (Tc) | 1.4 Ohm @ 2.4A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | |||
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VIEW |
1,820
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.8A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 37W (Tc) | N-Channel | 200V | 4.8A (Tc) | 690 mOhm @ 2.4A, 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | 10V | ±30V | |||
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VIEW |
1,374
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,333
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.8A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V |