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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,487
In-stock
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ON Semiconductor | MOSFET N-CH 900V 6.5A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TA) | Through Hole | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 2W (Ta), 37W (Tc) | N-Channel | - | 900V | 6.5A (Ta) | 2.7 Ohm @ 3.25A, 10V | - | 44nC @ 10V | 850pF @ 30V | 10V | ±30V | |||
|
VIEW |
2,662
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
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VIEW |
759
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 6.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6.5A (Ta) | 950 mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | 10V | ±20V | |||
