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- Power Dissipation (Max) :
- FET Type :
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19 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,884
In-stock
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Infineon Technologies | MOSFET N-CH 60V 7A 8SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,370
In-stock
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Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,779
In-stock
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ON Semiconductor | MOSFET N-CH 330V 7A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220-3 | - | N-Channel | - | 330V | 7A (Ta) | - | - | - | - | - | - | ||||
VIEW |
841
In-stock
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ON Semiconductor | MOSFET N-CH 330V 7A TO220-3 | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220-3 | - | N-Channel | - | 330V | 7A (Ta) | - | - | - | - | - | - | ||||
VIEW |
1,746
In-stock
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Renesas Electronics America | MOSFET N-CH 160V 7A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | - | 160V | 7A (Ta) | - | - | - | 600pF @ 10V | - | ±15V | ||||
VIEW |
3,178
In-stock
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Renesas Electronics America | MOSFET P-CH 160V 7A TO-3P | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | P-Channel | - | 160V | 7A (Ta) | - | - | - | 900pF @ 10V | 10V | ±15V | ||||
VIEW |
912
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 7A (Ta) | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
756
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
774
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
3,795
In-stock
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Infineon Technologies | MOSFET P-CH 30V 7A MICRO8 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.79W (Ta) | P-Channel | - | 30V | 7A (Ta) | 26 mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | 2204pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
685
In-stock
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Infineon Technologies | MOSFET P-CH 20V 7A 8-TSSOP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.5W (Ta) | P-Channel | - | 20V | 7A (Ta) | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | 2361pF @ 15V | 2.5V, 4.5V | ±12V | ||||
VIEW |
2,146
In-stock
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Infineon Technologies | MOSFET P-CH 30V 7A 8-TSSOP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.51W (Ta) | P-Channel | - | 30V | 7A (Ta) | 22 mOhm @ 7A, 10V | 2.5V @ 250µA | 72nC @ 10V | 2211pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,943
In-stock
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Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,033
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 550V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 7A (Ta) | 1.25 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
2,538
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
3,434
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 7A (Ta) | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
3,334
In-stock
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Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
961
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
1,980
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V |