Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDS5690-NBBM009A
RFQ
VIEW
RFQ
1,160
In-stock
ON Semiconductor MOSFET N-CH 60V 7A 8SOIC PowerTrench® Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7A (Ta) 28 mOhm @ 7A, 10V 4V @ 250µA 32nC @ 10V 1107pF @ 30V - -
FDS5690-NBBM009A
RFQ
VIEW
RFQ
2,356
In-stock
ON Semiconductor MOSFET N-CH 60V 7A 8SOIC PowerTrench® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7A (Ta) 28 mOhm @ 7A, 10V 4V @ 250µA 32nC @ 10V 1107pF @ 30V - -
FDS5690
RFQ
VIEW
RFQ
1,069
In-stock
ON Semiconductor MOSFET N-CH 60V 7A 8SOIC PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7A (Ta) 28 mOhm @ 7A, 10V 4V @ 250µA 32nC @ 10V 1107pF @ 30V 6V, 10V ±20V
FDS5690
RFQ
VIEW
RFQ
3,295
In-stock
ON Semiconductor MOSFET N-CH 60V 7A 8SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7A (Ta) 28 mOhm @ 7A, 10V 4V @ 250µA 32nC @ 10V 1107pF @ 30V 6V, 10V ±20V
FDS5690
RFQ
VIEW
RFQ
1,265
In-stock
ON Semiconductor MOSFET N-CH 60V 7A 8SOIC PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7A (Ta) 28 mOhm @ 7A, 10V 4V @ 250µA 32nC @ 10V 1107pF @ 30V 6V, 10V ±20V
TK7J90E,S1E
RFQ
VIEW
RFQ
961
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 200W (Tc) N-Channel - 900V 7A (Ta) 2 Ohm @ 3.5A, 10V 4V @ 700µA 32nC @ 10V 1350pF @ 25V 10V ±30V
TK7A90E,S4X
RFQ
VIEW
RFQ
1,980
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 900V 7A (Ta) 2 Ohm @ 3.5A, 10V 4V @ 700µA 32nC @ 10V 1350pF @ 25V 10V ±30V