Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK7A65D(STA4,Q,M)
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RFQ
912
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 7A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 650V 7A (Ta) 980 mOhm @ 3.5A, 10V 4V @ 1mA 24nC @ 10V 1200pF @ 25V 10V ±30V
2SK2740
RFQ
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RFQ
2,988
In-stock
Rohm Semiconductor MOSFET N-CH 600V 7A TO-220FN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 30W (Tc) N-Channel 600V 7A (Ta) 1.2 Ohm @ 4A, 10V 4V @ 1mA - 1050pF @ 10V 10V ±30V
2SK2299N
RFQ
VIEW
RFQ
3,892
In-stock
Rohm Semiconductor MOSFET N-CH 450V 7A TO-220FN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 30W (Tc) N-Channel 450V 7A (Ta) 1.1 Ohm @ 4A, 10V 4V @ 1mA - 870pF @ 10V 10V ±30V
TPCA8009-H(TE12L,Q
RFQ
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RFQ
2,569
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 150V 7A 8-SOPA - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 150V 7A (Ta) 350 mOhm @ 3.5A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V
TPCA8009-H(TE12L,Q
RFQ
VIEW
RFQ
2,253
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 150V 7A 8-SOPA - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 150V 7A (Ta) 350 mOhm @ 3.5A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V