Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK1058-E
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1,746
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Renesas Electronics America MOSFET N-CH 160V 7A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel - 160V 7A (Ta) - - - 600pF @ 10V - ±15V
2SJ162-E
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3,178
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Renesas Electronics America MOSFET P-CH 160V 7A TO-3P - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) P-Channel - 160V 7A (Ta) - - - 900pF @ 10V 10V ±15V
TK7P50D(T6RSS-Q)
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670
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A DPAK-3 π-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 100W (Tc) N-Channel - 500V 7A (Ta) 1.22 Ohm @ 3.5A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V