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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK2740	RFQ VIEW	PDF RFQ	2,988 In-stock	Rohm Semiconductor	MOSFET N-CH 600V 7A TO-220FN		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FN	30W (Tc)	N-Channel	-	600V	7A (Ta)	1.2 Ohm @ 4A, 10V	4V @ 1mA	-	1050pF @ 10V	10V	±30V
	2SK2299N	RFQ VIEW	PDF RFQ	3,892 In-stock	Rohm Semiconductor	MOSFET N-CH 450V 7A TO-220FN		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FN	30W (Tc)	N-Channel	-	450V	7A (Ta)	1.1 Ohm @ 4A, 10V	4V @ 1mA	-	870pF @ 10V	10V	±30V
	TK7A60W,S4VX	RFQ VIEW	PDF RFQ	774 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A TO-220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	600 mOhm @ 3.5A, 10V	3.7V @ 350µA	15nC @ 10V	490pF @ 300V	10V	±30V
	TK7A60W5,S5VX	RFQ VIEW	PDF RFQ	3,434 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A TO-220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	7A (Ta)	650 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V

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