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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
955
In-stock
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Microsemi Corporation | MOSFET N-CH 600V 20.7A D3PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 208W (Tc) | N-Channel | - | 600V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2440pF @ 25V | 10V | ±20V | |||
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VIEW |
2,806
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 20.7A | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 7.1W (Tc) | N-Channel | - | 40V | 20.7A (Tc) | 9 mOhm @ 14A, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,480
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 20.7A | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 7.1W (Tc) | N-Channel | - | 40V | 20.7A (Tc) | 9 mOhm @ 14A, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,998
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 20.7A | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 7.1W (Tc) | N-Channel | - | 40V | 20.7A (Tc) | 9 mOhm @ 14A, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,644
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A D2PAK | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,788
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,330
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A D2PAK | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V |