- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
902
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N CH 60V 56A I-PAK | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 99W (Tc) | N-Channel | - | 60V | 56A (Tc) | 7.9 mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,264
In-stock
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Infineon Technologies | MOSFET N CH 75V 56A I-PAK | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 99W (Tc) | N-Channel | - | 75V | 56A (Tc) | 11.2 mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,931
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,526
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,782
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,124
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,927
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,929
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | |||
