- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,058
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | |||
|
VIEW |
3,663
In-stock
|
Rohm Semiconductor | MOSFET N-CH 200V 15A TO-220FN | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 40W (Tc) | N-Channel | 200V | 15A (Ta) | 160 mOhm @ 7.5A, 10V | 4V @ 1mA | 64nC @ 10V | 1224pF @ 10V | 10V | ±30V | |||
