Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDD3N40TF
RFQ
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RFQ
1,804
In-stock
ON Semiconductor MOSFET N-CH 400V 2A DPAK UniFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 30W (Tc) N-Channel 400V 2A (Tc) 3.4 Ohm @ 1A, 10V 5V @ 250µA 6nC @ 10V 225pF @ 25V 10V ±30V
FDD3N40TM
RFQ
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RFQ
2,903
In-stock
ON Semiconductor MOSFET N-CH 400V 2A DPAK UniFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 30W (Tc) N-Channel 400V 2A (Tc) 3.4 Ohm @ 1A, 10V 5V @ 250µA 6nC @ 10V 225pF @ 25V 10V ±30V
IRFRC20TRLPBF
RFQ
VIEW
RFQ
2,094
In-stock
Vishay Siliconix MOSFET N-CH 600V 2A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
STD2HNK60Z
RFQ
VIEW
RFQ
2,553
In-stock
STMicroelectronics MOSFET N-CH 600V 2A DPAK SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel 600V 2A (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
IRFRC20TRPBF
RFQ
VIEW
RFQ
3,220
In-stock
Vishay Siliconix MOSFET N-CH 600V 2A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V