Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP2N80P
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3,136
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IXYS MOSFET N-CH 800V 2A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 800V 2A (Tc) 6 Ohm @ 1A, 10V 5.5V @ 50µA 10.6nC @ 10V 440pF @ 25V 10V ±30V
IXTP2N80
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1,238
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IXYS MOSFET N-CH 800V 2A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel - 800V 2A (Tc) 6.2 Ohm @ 500mA, 10V 5.5V @ 250µA 22nC @ 10V 440pF @ 25V 10V ±20V
SPP02N80C3XKSA1
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1,970
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Infineon Technologies MOSFET N-CH 800V 2A TO-220AB CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 42W (Tc) N-Channel - 800V 2A (Tc) 2.7 Ohm @ 1.2A, 10V 3.9V @ 120µA 16nC @ 10V 290pF @ 100V 10V ±20V
STP2N80K5
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RFQ
1,687
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STMicroelectronics MOSFET N-CH 800V 2A TO220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 45W (Tc) N-Channel - 800V 2A (Tc) 4.5 Ohm @ 1A, 10V 5V @ 100µA 3nC @ 10V 95pF @ 100V 10V 30V
STP3LN80K5
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RFQ
3,099
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STMicroelectronics MOSFET N-CHANNEL 800V 2A TO220 MDmesh™ K5 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 45W (Tc) N-Channel - 800V 2A (Tc) 3.25 Ohm @ 1A, 10V 5V @ 100µA 2.63nC @ 10V 102pF @ 100V 10V ±30V