Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPD07N20
RFQ
VIEW
RFQ
713
In-stock
Infineon Technologies MOSFET N-CH 200V 7A TO-252 SIPMOS® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 31.5nC @ 10V 530pF @ 25V 10V ±20V
BSC22DN20NS3GATMA1
RFQ
VIEW
RFQ
3,658
In-stock
Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
STD7NS20T4
RFQ
VIEW
RFQ
3,612
In-stock
STMicroelectronics MOSFET N-CH 200V 7A DPAK MESH OVERLAY™ Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 10V 4V @ 250µA 45nC @ 10V 540pF @ 25V 10V ±20V
SPD07N20GBTMA1
RFQ
VIEW
RFQ
1,363
In-stock
Infineon Technologies MOSFET N-CH 200V 7A TO252 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 31.5nC @ 10V 530pF @ 25V 10V ±20V
BSZ22DN20NS3GATMA1
RFQ
VIEW
RFQ
1,332
In-stock
Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V