- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 24 mOhm @ 5.6A, 4.5V (1)
- 25 mOhm @ 8.2A, 4.5V (1)
- 28 mOhm @ 3A, 4V (2)
- 32 mOhm @ 4.2A, 4.5V (1)
- 33 mOhm @ 2A, 4.5V (1)
- 38 mOhm @ 3.6A, 4.5V (1)
- 45 mOhm @ 4.2A, 4.5V (2)
- 52 mOhm @ 4.2A, 4.5V (2)
- 60 mOhm @ 4.2A, 4.5V (1)
- 65 mOhm @ 4.2A, 4.5V (1)
- 70 mOhm @ 4.2A, 4.5V (1)
- 85 mOhm @ 4A, 4.5V (1)
- 90 mOhm @ 3.6A, 4.5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,630
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
2,128
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 4.2A SC75-6 | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP | 1.6W (Ta) | P-Channel | 20V | 4.2A (Ta) | 70 mOhm @ 4.2A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | 780pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,664
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
652
In-stock
|
ON Semiconductor | MOSFET N-CH 20V 4.2A 6-TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 600mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 24 mOhm @ 5.6A, 4.5V | 1.4V @ 250µA | 20.3nC @ 4.5V | 935pF @ 16V | - | - | |||
|
VIEW |
2,387
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 4.2A TSOT-26 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | 20V | 4.2A (Ta) | 65 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.4nC @ 4.5V | 845pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
|
VIEW |
2,044
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V U-WLB1515-9 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, WLBGA | U-WLB1515-9 | 1W (Ta) | P-Channel | 20V | 4.2A (Ta) | 33 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | 500pF @ 10V | 1.8V, 4.5V | -6V | |||
|
VIEW |
3,205
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 800mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 38 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 7nC @ 4.5V | 594.3pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,172
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
2,873
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 780mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 25 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 9.6nC @ 4.5V | 829.9pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,544
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 20V SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 490mW (Ta), 5W (Tc) | N-Channel | 20V | 4.2A (Ta) | 32 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 11nC @ 4.5V | 655pF @ 10V | 1.2V, 4.5V | ±12V | |||
|
|
VIEW |
1,287
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 800mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 90 mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7nC @ 4.5V | 594.3pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
|
VIEW |
2,353
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1.4W (Ta) | P-Channel | 20V | 4.2A (Ta) | 60 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 7.6nC @ 4.5V | 727pF @ 20V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
2,597
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.4W (Ta) | P-Channel | 20V | 4.2A (Ta) | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | 808pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
|
|
VIEW |
2,314
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.4W (Ta) | P-Channel | 20V | 4.2A (Ta) | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | 808pF @ 15V | 1.8V, 4.5V | ±8V | |||
