- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
-
- 125 mOhm @ 2.9A, 10V (2)
- 130 mOhm @ 4.4A, 10V (1)
- 24 mOhm @ 5.6A, 4.5V (1)
- 25 mOhm @ 5.8A, 10V (1)
- 25 mOhm @ 8.2A, 4.5V (1)
- 28 mOhm @ 3A, 4V (2)
- 32 mOhm @ 4.2A, 4.5V (1)
- 38 mOhm @ 3.6A, 4.5V (1)
- 40 mOhm @ 4.2A, 10V (1)
- 45 mOhm @ 4.2A, 4.5V (2)
- 60 mOhm @ 4.2A, 10V (1)
- 79 mOhm @ 3A, 10V (1)
- 80 mOhm @ 3.3A, 10V (1)
- 85 mOhm @ 4A, 4.5V (1)
- 90 mOhm @ 3.6A, 4.5V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
18 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,630
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
3,664
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
652
In-stock
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ON Semiconductor | MOSFET N-CH 20V 4.2A 6-TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 600mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 24 mOhm @ 5.6A, 4.5V | 1.4V @ 250µA | 20.3nC @ 4.5V | 935pF @ 16V | - | - | |||
|
VIEW |
3,422
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 4.2A PWRDI3333 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 980mW (Ta) | N-Channel | - | 100V | 4.2A (Ta) | 80 mOhm @ 3.3A, 10V | 3V @ 250µA | 25.2nC @ 10V | 1172pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
2,889
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 4.2A SC59 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 780mW (Ta) | N-Channel | - | 30V | 4.2A (Ta) | 40 mOhm @ 4.2A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,535
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 4.2A 8SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | - | 100V | 4.2A (Ta) | 79 mOhm @ 3A, 10V | 2.7V @ 250µA | 20nC @ 10V | 942pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,726
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 4.2A DPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 2.11W (Ta) | N-Channel | - | 100V | 4.2A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17.16nC @ 10V | 859pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
|
VIEW |
3,205
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 800mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 38 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 7nC @ 4.5V | 594.3pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
1,172
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,770
In-stock
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Diodes Incorporated | MOSFET N-CH 70V 6.1A D-PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 2.11W (Ta) | N-Channel | - | 70V | 4.2A (Ta) | 130 mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | 298pF @ 40V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,873
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 780mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 25 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 9.6nC @ 4.5V | 829.9pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
997
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 780mW (Ta) | N-Channel | - | 30V | 4.2A (Ta) | 25 mOhm @ 5.8A, 10V | 2V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,544
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 20V SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 490mW (Ta), 5W (Tc) | N-Channel | - | 20V | 4.2A (Ta) | 32 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 11nC @ 4.5V | 655pF @ 10V | 1.2V, 4.5V | ±12V | |||
|
VIEW |
1,287
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 800mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 90 mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7nC @ 4.5V | 594.3pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
966
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 4.2A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 2.11W (Ta) | N-Channel | - | 100V | 4.2A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17.16nC @ 10V | 859pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,043
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 4.2A 6TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP | 2W (Ta) | N-Channel | - | 60V | 4.2A (Ta) | 60 mOhm @ 4.2A, 10V | 3V @ 250µA | 11.5nC @ 10V | 540pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V |