- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
631
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | - | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | - | - | |||
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VIEW |
3,794
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
VIEW |
1,630
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
VIEW |
1,664
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
VIEW |
1,055
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | - | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | - | - | |||
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|
VIEW |
1,508
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 20V | 4.2A (Ta) | 85 mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
3,325
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 4.2A 8SOIC | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | 100V | 4.2A (Ta) | 79 mOhm @ 3A, 10V | 2.7V @ 250µA | 20nC @ 10V | 942pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,535
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 4.2A 8SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | 100V | 4.2A (Ta) | 79 mOhm @ 3A, 10V | 2.7V @ 250µA | 20nC @ 10V | 942pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,271
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 4.2A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | 100V | 4.2A (Ta) | 79 mOhm @ 3A, 10V | 2.7V @ 250µA | 20nC @ 10V | 942pF @ 50V | 4.5V, 10V | ±20V | |||
