Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQD6N60CTM
RFQ
VIEW
RFQ
2,990
In-stock
ON Semiconductor MOSFET N-CH 600V 4A DPAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 80W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
IXTP8N50PM
RFQ
VIEW
RFQ
3,006
In-stock
IXYS MOSFET N-CH 500V 4A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 41W (Tc) N-Channel - 500V 4A (Tc) 800 mOhm @ 4A, 10V 5.5V @ 250µA 20nC @ 10V 1050pF @ 25V 10V ±30V
FQD6N60CTM-WS
RFQ
VIEW
RFQ
1,737
In-stock
ON Semiconductor MOSFET N-CH 600V DPAK QFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 80W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
TSM4N80CI C0G
RFQ
VIEW
RFQ
3,949
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 4A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 38.7W (Tc) N-Channel - 800V 4A (Tc) 3 Ohm @ 1.2A, 10V 4V @ 250µA 20nC @ 10V 955pF @ 25V 10V ±30V
TSM4N80CZ C0G
RFQ
VIEW
RFQ
1,030
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 38.7W (Tc) N-Channel - 800V 4A (Tc) 3 Ohm @ 1.2A, 10V 4V @ 250µA 20nC @ 10V 955pF @ 25V 10V ±30V
IXTP7N60PM
RFQ
VIEW
RFQ
2,247
In-stock
IXYS MOSFET N-CH 600V 4A TO-220 Polar™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 41W (Tc) N-Channel - 600V 4A (Tc) 1.1 Ohm @ 3.5A, 10V 5.5V @ 100µA 20nC @ 10V 1180pF @ 25V 10V ±30V