- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,783
In-stock
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Infineon Technologies | MOSFET N-CH 40V 40A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 40V | 40A (Tc) | 10.5 mOhm @ 40A, 10V | 2V @ 14µA | 23nC @ 10V | 1900pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
739
In-stock
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ON Semiconductor | MOSFET N-CH 30V 40A TO-220AB | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 40.5W (Tc) | N-Channel | - | 30V | 40A (Tc) | 15 mOhm @ 40A, 10V | 2.5V @ 250µA | 23nC @ 10V | 1235pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
870
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A TO220SIS | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 60V | 40A (Tc) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | |||
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VIEW |
3,041
In-stock
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Infineon Technologies | MOSFET N-CH 8TDSON | Automotive, AEC-Q101, OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 48W (Tc) | N-Channel | - | 40V | 40A (Tc) | 5.4 mOhm @ 20A, 10V | 3.4V @ 17µA | 23nC @ 10V | 1300pF @ 25V | 7V, 10V | ±20V | |||
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VIEW |
831
In-stock
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Infineon Technologies | MOSFET N-CH 8TDSON | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 48W (Tc) | N-Channel | - | 40V | 40A (Tc) | 5.4 mOhm @ 20A, 10V | 3.4V @ 17µA | 23nC @ 10V | 1300pF @ 25V | 7V, 10V | ±20V | |||
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|
VIEW |
3,084
In-stock
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Infineon Technologies | MOSFET N-CH 8TDSON | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 48W (Tc) | N-Channel | - | 40V | 40A (Tc) | 5.4 mOhm @ 20A, 10V | 3.4V @ 17µA | 23nC @ 10V | 1300pF @ 25V | 7V, 10V | ±20V | |||
