- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,630
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | |||
|
VIEW |
1,824
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 270W (Tc) | N-Channel | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | |||
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|
VIEW |
690
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | |||
