Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SCT2080KEC
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2,630
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Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
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3,762
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Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 277W (Tc) N-Channel 1700V 40A (Tc) 125 mOhm @ 28A, 20V 4V @ 10mA 120nC @ 20V 2250pF @ 1000V 20V +25V, -10V
SCT30N120
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1,824
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STMicroelectronics MOSFET N-CH 1200V 45A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 270W (Tc) N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V
SCH2080KEC
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RFQ
690
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 1850pF @ 800V 18V +22V, -6V