Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NP80N04KHE-E1-AY
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1,909
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Renesas Electronics America MOSFET N-CH 40V 80A TO-263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 120W (Tc) N-Channel - 40V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 60nC @ 10V 3300pF @ 25V 10V ±20V
NP80N04PUG-E1B-AY
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1,499
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Renesas Electronics America MOSFET N-CH 40V 80A TO-263 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 115W (Tc) N-Channel - 40V 80A (Tc) 4.5 mOhm @ 40A, 10V 4V @ 250µA 135nC @ 10V 7350pF @ 25V 10V ±20V
STH140N6F7-6
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3,375
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STMicroelectronics N-CHANNEL 60 V, 0.0028 OHM TYP., STripFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) H2PAK-6 158W (Tc) N-Channel - 60V 80A (Tc) 3.2 mOhm @ 40A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V
STH140N6F7-2
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3,559
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STMicroelectronics MOSFET N-CH 60V 80A H2PAK-2 DeepGATE™, STripFET™ VII Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 158W (Tc) N-Channel - 60V 80A (Tc) 3 mOhm @ 40A, 10V 4V @ 250µA 40nC @ 10V 2700pF @ 25V 10V ±20V