- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
-
- 10.7 mOhm @ 40A, 10V (1)
- 11 mOhm @ 40A, 10V (1)
- 11 mOhm @ 60A, 10V (1)
- 4.8 mOhm @ 69A, 10V (1)
- 4.8 mOhm @ 80A, 10V (3)
- 5.4 mOhm @ 63A, 10V (1)
- 5.9 mOhm @ 56A, 10V (1)
- 6.5 mOhm @ 40A, 10V (1)
- 6.6 mOhm @ 68A, 10V (3)
- 6.8 mOhm @ 51A, 10V (1)
- 6.9 mOhm @ 40A, 10V (1)
- 7.9 mOhm @ 43A, 10V (1)
- 8 mOhm @ 40A, 10V (3)
- 8 mOhm @ 58A, 10V (3)
- 8 mOhm @ 80A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10760pF @ 25V (1)
- 13060pF @ 25V (1)
- 2075pF @ 25V (2)
- 2650pF @ 25V (1)
- 2860pF @ 25V (2)
- 3400pF @ 25V (2)
- 3660pF @ 25V (1)
- 3800pF @ 25V (1)
- 3850pF @ 25V (1)
- 4350pF @ 25V (1)
- 4400pF @ 25V (1)
- 4540pF @ 25V (1)
- 5300pF @ 25V (1)
- 5700pF @ 25V (2)
- 6475pF @ 25V (1)
- 6900pF @ 25V (1)
- 7530pF @ 25V (1)
- 7768pF @ 25V (1)
- 9417pF @ 25V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
23 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,997
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 80A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.8W (Ta), 115W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.9 mOhm @ 40A, 10V | 2.5V @ 250µA | 135nC @ 10V | 6900pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,455
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,022
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,198
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,489
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
VIEW |
609
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | 2650pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
744
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 7530pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
913
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,364
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 4540pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,455
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,192
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 105W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.9 mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | 5V, 10V | ±16V | |||
|
|
VIEW |
1,542
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.9 mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | 9417pF @ 25V | 5V, 10V | ±16V | |||
|
|
VIEW |
1,910
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | |||
|
|
VIEW |
2,766
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 135W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.8 mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | 7768pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,058
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,971
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 155nC @ 10V | 3850pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,203
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 10.7 mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,553
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,834
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,917
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 142nC @ 10V | 5300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
813
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,417
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.5 mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | 4400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
731
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V | |||
