Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD80R280P7ATMA1
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629
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Infineon Technologies MOSFET N-CH 800V 17A TO252 CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 101W (Tc) N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 36nC @ 10V 1200pF @ 500V 10V ±20V
SPB17N80C3ATMA1
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3,694
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Infineon Technologies MOSFET N-CH 800V 17A D2PAK CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 227W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 11A, 10V 3.9V @ 1mA 177nC @ 10V 2300pF @ 100V 10V ±20V
FCB290N80
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3,078
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ON Semiconductor MOSFET N-CH 800V 17A D2PAK SuperFET® II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 212W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75nC @ 10V 3205pF @ 100V 10V ±20V
STB18NM80
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1,786
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STMicroelectronics MOSFET N-CH 800V 17A D2PAK MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 800V 17A (Tc) 295 mOhm @ 8.5A, 10V 5V @ 250µA 70nC @ 10V 2070pF @ 50V 10V ±25V