Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL530NSTRRPBF
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1,128
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Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRLR024NTRRPBF
RFQ
VIEW
RFQ
1,988
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Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRLR3410TRRPBF
RFQ
VIEW
RFQ
720
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRLR3410PBF
RFQ
VIEW
RFQ
3,418
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRFR15N20DPBF
RFQ
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RFQ
3,624
In-stock
Infineon Technologies MOSFET N-CH 200V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 140W (Tc) N-Channel - 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 10V ±30V
TPH3206PD
RFQ
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RFQ
2,030
In-stock
Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel - 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3206PS
RFQ
VIEW
RFQ
753
In-stock
Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel - 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
IRFR024NPBF
RFQ
VIEW
RFQ
1,700
In-stock
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 75 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V
IRLR024NPBF
RFQ
VIEW
RFQ
1,446
In-stock
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V