Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFN26N100P
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RFQ
1,559
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IXYS MOSFET N-CH 1000V 23A SOT-227B Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 595W (Tc) N-Channel - 1000V 23A (Tc) 390 mOhm @ 13A, 10V 6.5V @ 1mA 197nC @ 10V 11900pF @ 25V 10V ±30V
APT22F100J
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RFQ
2,083
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Microsemi Corporation MOSFET N-CH 1000V 23A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 545W (Tc) N-Channel - 1000V 23A (Tc) 380 mOhm @ 18A, 10V - 305nC @ 10V 9835pF @ 25V 10V ±30V
IXFN23N100
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RFQ
2,427
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IXYS MOSFET N-CH 1000V 23A SOT-227B - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 600W (Tc) N-Channel - 1000V 23A (Tc) - 5V @ 8mA - - 10V ±20V
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RFQ
2,039
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Microsemi Corporation MOSFET N-CH 1000V 23A SP1 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 390W (Tc) N-Channel - 1000V 23A (Tc) 396 mOhm @ 18A, 10V 5V @ 2.5mA 305nC @ 10V 7868pF @ 25V 10V ±30V
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RFQ
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RFQ
3,497
In-stock
Microsemi Corporation MOSFET N-CH 1000V 23A SP1 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 390W (Tc) N-Channel - 1000V 23A (Tc) 396 mOhm @ 18A, 10V 5V @ 2.5mA 305nC @ 10V 7868pF @ 25V 10V ±30V
IXFR32N100Q3
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RFQ
2,312
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IXYS MOSFET N-CH 1000V 23A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 570W (Tc) N-Channel - 1000V 23A (Tc) 350 mOhm @ 16A, 10V 6.5V @ 8mA 195nC @ 10V 9940pF @ 25V 10V ±30V
APT10045B2LLG
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RFQ
2,822
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Microsemi Corporation MOSFET N-CH 1000V 23A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel - 1000V 23A (Tc) 450 mOhm @ 11.5A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V 10V ±30V