- Series :
- Part Status :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
609
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | 2650pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
744
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 7530pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
913
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | 10V | ±20V | ||||
VIEW |
1,364
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 4540pF @ 25V | 10V | ±20V | ||||
VIEW |
1,455
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||||
VIEW |
3,203
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 10.7 mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | 10V | ±20V | ||||
VIEW |
3,553
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | 10V | ±20V | ||||
VIEW |
3,834
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | ||||
VIEW |
813
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V |