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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRFZ44N	RFQ VIEW	PDF RFQ	2,982 In-stock	Infineon Technologies	MOSFET N-CH 55V 31A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	94W (Tc)	N-Channel	-	55V	49A (Tc)	17.5 mOhm @ 25A, 10V	4V @ 250µA	63nC @ 10V	1470pF @ 25V	10V	±20V
	AUIRFZ48N	RFQ VIEW	PDF RFQ	2,241 In-stock	Infineon Technologies	MOSFET N CH 55V 69A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	160W (Tc)	N-Channel	-	55V	69A (Tc)	14 mOhm @ 40A, 10V	4V @ 100µA	63nC @ 10V	1900pF @ 25V	10V	±20V
	IRF5305PBF	RFQ VIEW	PDF RFQ	1,862 In-stock	Infineon Technologies	MOSFET P-CH 55V 31A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	110W (Tc)	P-Channel	-	55V	31A (Tc)	60 mOhm @ 16A, 10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	10V	±20V
	IRFZ44NPBF	RFQ VIEW	PDF RFQ	3,847 In-stock	Infineon Technologies	MOSFET N-CH 55V 49A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	94W (Tc)	N-Channel	-	55V	49A (Tc)	17.5 mOhm @ 25A, 10V	4V @ 250µA	63nC @ 10V	1470pF @ 25V	10V	±20V

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