Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NXP USA Inc. MOSFET N-CH 55V 19A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 56W (Tc) N-Channel - 55V 19A (Tc) 70 mOhm @ 10A, 10V 2V @ 1mA 9.4nC @ 5V 650pF @ 25V 5V, 10V ±15V
HUFA75309P3
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ON Semiconductor MOSFET N-CH 55V 19A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel - 55V 19A (Tc) 70 mOhm @ 19A, 10V 4V @ 250µA 24nC @ 20V 350pF @ 25V 10V ±20V
HUF75309P3
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ON Semiconductor MOSFET N-CH 55V 19A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel - 55V 19A (Tc) 70 mOhm @ 19A, 10V 4V @ 250µA 24nC @ 20V 350pF @ 25V 10V ±20V
IRF9Z34NPBF
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2,221
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Infineon Technologies MOSFET P-CH 55V 19A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) P-Channel - 55V 19A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 620pF @ 25V 10V ±20V