Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CSD18542KTT
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1,289
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Texas Instruments MOSFET N-CH 60V 200A D2PAK NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 250W (Tc) N-Channel - 60V 200A (Ta) 4 mOhm @ 100A, 10V 2.2V @ 250µA 57nC @ 10V 5070pF @ 30V 4.5V, 10V ±20V
SI7370DP-T1-E3
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1,107
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Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel - 60V 9.6A (Ta) 11 mOhm @ 12A, 10V 4V @ 250µA 57nC @ 10V - 6V, 10V ±20V
SI7370DP-T1-GE3
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2,076
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Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 - 1.9W (Ta) N-Channel - 60V 9.6A (Ta) 11 mOhm @ 12A, 10V 4V @ 250µA 57nC @ 10V - 10V ±20V
CSD18542KTTT
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2,597
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Texas Instruments MOSFET N-CH 60V 200A DDPAK NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) - TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 250W (Tc) N-Channel - 60V 200A (Ta), 170A (Tc) 4 mOhm @ 100A, 10V 2.2V @ 250µA 57nC @ 10V 5070pF @ 30V 4.5V, 10V ±20V