Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB120N06N G
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3,064
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Infineon Technologies MOSFET N-CH 60V 75A TO-263 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 158W (Tc) N-Channel - 60V 75A (Tc) 11.7 mOhm @ 75A, 10V 4V @ 94µA 62nC @ 10V 2100pF @ 30V 10V ±20V
IPB110N06L G
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RFQ
2,507
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Infineon Technologies MOSFET N-CH 60V 78A TO-263 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 158W (Tc) N-Channel - 60V 78A (Tc) 11 mOhm @ 78A, 10V 2V @ 94µA 79nC @ 10V 2700pF @ 30V 4.5V, 10V ±20V
STH140N6F7-6
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RFQ
3,082
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STMicroelectronics N-CHANNEL 60 V, 0.0028 OHM TYP., STripFET™ Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) H2PAK-6 158W (Tc) N-Channel - 60V 80A (Tc) 3.2 mOhm @ 40A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V
STH140N6F7-2
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RFQ
2,173
In-stock
STMicroelectronics MOSFET N-CH 60V 80A H2PAK-2 DeepGATE™, STripFET™ VII Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 158W (Tc) N-Channel - 60V 80A (Tc) 3 mOhm @ 40A, 10V 4V @ 250µA 40nC @ 10V 2700pF @ 25V 10V ±20V