Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3J356R,LF
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 2A SOT23F U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 60V 2A (Ta) 300 mOhm @ 1A, 10V 2V @ 1mA 8.3nC @ 10V 330pF @ 10V 4V, 10V +10V, -20V
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 400MA S-MINI U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 S-Mini 1.2W (Ta) P-Channel - 60V 400mA (Ta) 1.9 Ohm @ 100mA, 4.5V 2V @ 1mA 3nC @ 10V 82pF @ 10V 4V, 10V +20V, -16V
SSM3J351R,LF
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2,292
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 3.5A SOT23F U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount SOT-23-3 Flat Leads SOT-23F 2W (Ta) P-Channel - 60V 3.5A (Ta) 134 mOhm @ 1A, 10V 2V @ 1mA 15.1nC @ 10V 660pF @ 10V 4V, 10V +10V, -20V