Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH7R006PL,L1Q
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 81W (Tc) N-Channel - 60V 60A (Tc) 13.5 mOhm @ 10A, 4.5V 2.5V @ 200µA 22nC @ 10V 1875pF @ 30V 4.5V, 10V ±20V
TPH2R506PL,L1Q
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2,426
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 132W (Tc) N-Channel - 60V 100A (Tc) 4.4 mOhm @ 30A, 4.5V 2.5V @ 500µA 60nC @ 10V 5435pF @ 30V 4.5V, 10V ±20V
TPW1R306PL,L1Q
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3,205
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) - Surface Mount 8-PowerVDFN 8-DSOP Advance 960mW (Ta), 170W (Tc) N-Channel - 60V 260A (Tc) - - - - 4.5V, 10V ±20V
TK4R4P06PL,RQ
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2,549
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 58A DPAK U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 87W (Tc) N-Channel - 60V 58A (Tc) 4.4 mOhm @ 29A, 10V 2.5V @ 500µA 48.2nC @ 10V 3280pF @ 30V 4.5V, 10V ±20V
TK6R7P06PL,RQ
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2,672
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V