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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,465
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | ||||
VIEW |
3,958
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13A WDSON-2 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 38W (Tc) | N-Channel | - | 60V | 13A (Ta), 56A (Tc) | 7.7 mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | 10V | ±20V | ||||
VIEW |
2,536
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V | ||||
VIEW |
3,677
In-stock
|
EPC | TRANS GAN 60V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 60A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | 5V | +6V, -4V | ||||
VIEW |
3,765
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 22A WDSON-2 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 78W (Tc) | N-Channel | - | 60V | 22A (Ta), 90A (Tc) | 2.8 mOhm @ 30A, 10V | 4V @ 102µA | 143nC @ 10V | 12000pF @ 30V | 10V | ±20V | ||||
VIEW |
3,910
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V | ||||
VIEW |
3,676
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | ||||
VIEW |
2,931
In-stock
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | ||||
VIEW |
813
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||||
VIEW |
627
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | - | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | ||||
VIEW |
935
In-stock
|
EPC | TRANS GAN 60V 1A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 1A (Ta) | 45 mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15nC @ 5V | 115pF @ 30V | 5V | +6V, -4V |