Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NP15P06SLG-E1-AY
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1,106
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Renesas Electronics America MOSFET P-CH 60V 15A TO-252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (MP-3ZK) 1.2W (Ta), 30W (Tc) P-Channel - 60V 15A (Ta) 70 mOhm @ 7.5A, 10V 2.5V @ 250µA 23nC @ 10V 1100pF @ 10V 4.5V, 10V ±20V
TSM220NB06LCR RLG
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1,416
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel - 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 2.5V @ 250µA 23nC @ 10V 1314pF @ 30V 4.5V, 10V ±20V
TPN11006NL,LQ
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2,087
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPH11006NL,LQ
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671
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V