- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,028
In-stock
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Infineon Technologies | MOSFET N-CH 60V 79A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||||
VIEW |
2,804
In-stock
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Infineon Technologies | MOSFET N-CH 60V 16A 8-PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 100W (Tc) | N-Channel | - | 60V | 16A (Ta), 89A (Tc) | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | 2490pF @ 25V | 10V | ±20V | ||||
VIEW |
3,337
In-stock
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Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||||
VIEW |
2,099
In-stock
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Infineon Technologies | MOSFET N-CH 60V 56A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||||
VIEW |
1,446
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | ||||
VIEW |
1,181
In-stock
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Infineon Technologies | MOSFET N-CH 60V 75A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 60V | 75A (Tc) | 8.5 mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | 10V | ±20V |